Mosfet 20n60c3



Infineon 20N60C3 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for Infineon 20N60C3 MOSFET. Item 1 10pcs SPP20N60C3 20N60C3 INFINEON TO-220 TRANSISTOR 1 - 10pcs SPP20N60C3 20N60C3 INFINEON TO-220. Item 3 SPP20N60C3 INFINEON TRANS MOSFET N-CH 600V 20.7A TO-220 ROHS 4 PIECES 3 - SPP20N60C3 INFINEON TRANS MOSFET N-CH 600V 20.7A TO-220 ROHS 4 PIECES. Ratings and Reviews. 5.0 out of 5 stars.

20N60C3 Datasheet PDF - Intersil Corporation

Part Number20N60C3
DescriptionHGTG20N60C3
Manufacturers Intersil Corporation 
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HGTG20N60C3, HGTP20N60C3,
January 2000 File Number 4492.2
This family of MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
The IGBT is ideal for many high voltage switching
www.DataSheaept4pUlic.caotimons operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
Formerly developmental type TA49178.
PART NUMBER
BRAND
TO-247
HGTP20N60C3
G20N60C3
TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
Symbol
G
Features
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
• Low Conduction Loss
- TB334 “Guidelines for Soldering Surface Mount
Packaging
E
G
(FLANGE)
EC
COLLECTOR
JEDEC TO-263AB
E
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,598,461
4,803,533
4,417,385
4,684,413
4,890,143
4,620,211
4,809,047
4,443,931
4,717,679
4,904,609
4,639,754
4,823,176
4,516,143
4,783,690
4,963,951
4,641,162
4,860,080
4,587,713
4,801,986
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000


Typical Performance Curves Unless Otherwise Specified (Continued)
RG = 10, L = 1mH, VCE = 480V
250
200
175
125
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
120
110
TJ = 150oC, VGE = 10V OR VGE = 15V
80
TJ = 25oC, VGE = 10V OR 15V
50
5 10 15 20 25 30 35
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
40
DUTY CYCLE <0.5%, VCE = 10V
250
150
100
50
5 6 7 8 9 10 11 12 13 14 15
FIGURE 13. TRANSFER CHARACTERISTIC
IG (REF) = 1mA, RL = 15, TC = 25oC
12
8
VCE = 400V
2
0 10 20 30 40 50 60 70 80 90 100
FIGURE 14. GATE CHARGE WAVEFORMS
CIES
FREQUENCY = 1MHz
2
1
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE


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1. - 600V, 45A, HGTG20N60C3 (Transistor)
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Featured Datasheets

20n60c3 Mosfet Pinout

Part NumberDescriptionManufacturers
20N60C2The function is SPP20N60C2.
Infineon Technologies
20N60C3The function is HGTG20N60C3.
Intersil Corporation
20N60C5The function is IXKH20N60C5.
IXYS

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